us1ab - US1MB voltage range: 50 - 1000v current: 1.0 a surface mount ultafast rectifier diodes features maximum ratings and electrical characteristics t a = 25 c unless otherwise specified glass passivated die construction diffused junction ultra-fast recovery time for high efficiency low forward voltage drop, high current capability, and low power loss ideally suited for automated assembly plastic material: ul flammability classification rating 94v-0 single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. smb(do-214aa) dim min max a b c 1.91 2.21 d 0.15 0.31 e 5.00 5.59 g 0.10 0.20 h 0.76 1.52 j 2.00 2.62 all dimensions in mm a b c d g h e j 3.30 3.94 4.06 4.70 a b c d g h e j ! ! terminals: solder plated, solderable per mil-std-750, method 2026 ! polarity: cathode band or cathode notch ! marking: type number ! mechanical data case: smb/do-214aa, molded plastic weight: 0.093 grams (approx.) ! ! ! ! ! ! notes: 1. measured at 1.0mhz and applied reverse voltage of 4.0v dc. 2. measured with i f = 0.5a, i r = 1.0a, i rr = 0.25a. peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 400 600 800 1000 v rms reverse voltage v r(rms) 35 70 140 280 420 560 700 v average rectified output current @ t t = 75 c i o 1.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 30 a forward voltage drop @ i f = 1.0a v fm 1.0 1.3 1.7 v peak reverse current @ t a = 25 c at rated dc blocking voltage @ t a = 100 c i rm 5.0 100 a reverse recovery time (note 2) t rr 50 75 ns typical junction capacitance (note 1) c j 20 10 pf typical thermal resistance, junction to terminal r jt 30 c/w operating and storage temperature range t j, t stg -65 to +150 c characteristic symbol us1ab us1bb us1db us1gb us1jb us1kb US1MB unit 1 of 2 www.sunmate.tw
50v dc approx 50 ni (non-inductive) ? 10 ni ? 1.0 ni ? oscilloscope (note 1) pulse generator (note 2) device under test t rr set time base for 50/100 ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 50 . ? ? fi g . 5 reverse recover y time characteristic and test circuit (+) (+) (-) (-) 0.01 0.1 1.0 10 100 1000 0 20 40 60 80 100 120 140 i , instantaneous reverse current ( a ) r percent of rated peak reverse voltage (%) fi g .4 t y pical reverse characteristics t = 100 c j t = 25 c j 0.01 0.1 1.0 10 0 0.4 0.8 i , instantaneous for ward current (a ) f v , instantaneous forward voltage (v) fi g .2 t y pical forward characteristics f t - 25 c j pulse width = 300 s 1.2 1.6 2.0 0 10 20 30 40 1 10 100 i , peak for ward surge current (a ) fsm number of cycles at 60hz fi g . 3 forward sur g e current deratin g curve single half sine-wave (jedec method) t = 150 c j 0 0.5 1.0 25 50 75 100 125 150 i , average rectified current (a) o t , terminal temperature ( c) fi g . 1 forward current deratin g curve t us1a b- us1db us1gb us1j b- US1MB 2 of 2 www.sunmate.tw
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